Molecular Beam Epitaxy (MBE) System
10-12 torr UHV MBE chamber
Load lock chamber
Two electron beam guns
Three Knudsen cells
Total of eight target materials
EIPS (Electron Impact Photon Spectroscopy) for rate monitoring
PC controlled shuttering
Rotating, temperature controlled substrate holder to 1100
In situ RHEED, LEED and AESScanning Tunneling Microscopy (STM) in situAr ion milling
Magneto-Optical Kerr Effect (MOKE) in situ
Residual Gas Analysis (RGA)
Uses: metallic multilayer deposition, thin magnetic films etc.
Sputtering System
HV sputter deposition chamber
Rf and dc magnetron sputtering
Total of eight target materials
Twin load lock facility
Substrate holder temperature controlled to 1000 C
Non-Aligned Chopped power Oscillatory (NACHO) technique
Gas flow control panel for Ar, N2 and O2 partial pressure control
Uses: reactive sputtering of oxides, deposition of tunnel junctions etc.
Sputtering System
HV dc sputter deposition chamber
Variable temperature substrate holder
Three S-gun targets
Uses: e.g. metallic multilayer deposition
Custom Evaporation Chamber
HV evaporation chamber
Three K cells
Four target electron beam evaporator
Temperature controlled substrate holder to 500 CUses: preparation of FM/AFM bilayers for exchange bias studies
Uses: e.g. metallic multilayer deposition
Sample Processing Equipment
Lithography
Fully outfitted photolithography laboratory
Cambridge EBMF 10.5 electron beam writing system for electron beam lithography
Electron beam lithography system based on JEOL SEM
Buehler electropolisher, controlled by a computer via a house-built relay box. Used to prepare porous alumina masks via anodization of aluminum.
Structural Characterization Techniques
Structure
High Power rotating anode Rigaku X-Ray diffraction system
High resolution Discover D8 x-ray diffraction system
Low angle reflectivity and high angle diffraction
Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM) and electron microprobe analysis
Thickness profilometerSTM, AES, RHEED and LEED available in situ in MBE system
Magnetic and Transport Characterization Techniques
T superconducting magnet
Variable temperature insert from 1.5 K to 300 K
Used for measurement of electrical transport properties such as magnetoresistance and Hall effect
T superconducting magnet for MOKE measurements
Optical cryostat with a superconducting coil with a horizontal field
Variable temperature insert from 2.4 K to 300 K
Magneto-optical Kerr setup with stabilized HeNe-Laser; Capability to detect transversal and longitudinal magnetization component
Used to measure magnetization hysteresis curves on nanostructured exchange bias systems
Vibrating Sample Magnetometer (VSM
)Magnetometer with 10-5 emu sensitivity
Electromagnet capable of 1.8 T
SQUID Magnetometer
Quantum Design MPMS system
1.8K to 400K temperature range
7 T superconducting magnet
10-8 emu sensitivity
Fully automated
Screened Enclosure (Faraday Cage)Screened room for tunneling experiments
Two liquid helium dewars down to 1.
5 K5 T superconducting magnet
System for measurement of differential conductance of tunnel junctions as a function of voltage, temperature and magnetic field
Closed cycle refrigerator based transport system
Nanosensor Lab
Organic Molecular Beam Epitaxy (OMBE) system I
10-10 torr UHV chamber.
Load lock chamber.
Two electron beam guns x 4 crucibles each.
Low temperature molecular beam evaporation source.
Four dual head quartz crystal sensors for rate monitoring.
Rotating, DC biased, temperature controlled to 300� C substrate holder.
In situ floating shadow masking, positioning 20 micron or more over substrate, moving range 1 cm x 1 cm with 5 micron resolution.
3 cm DC Kaufman ion gun.
Tectra plasma source.
Residual gas analyzer (RGA).
Ion flux probe.
Uses: organic metallic deposition, binary alloys deposition, complex in-situ multi layer devices by mechanical masking
Organic Molecular Beam Deposition (OMBD) system II
5x10-9 torr UHV chamber.
Load lock chamber.
Four low temperature effusion cells for organic deposition.
Rotating substrate holder for samples up to 1 inch diameter.
Temperature controlled sample holder cooled/heated (while rotating) from -130 C to 450 C
Dual head quartz crystal sensors for rate monitoring.
Electron beam gun with 4 pockets.
Shadow mask with +/- 1.5 cm x,z motion and 10 cm y motion.
Flow systems for electrical or optical characterization of gas sensors
4"x6"x3" stainless steel sample chamber.
Closed-loop temperature control: 0 - 100 � 0.05� C, 20 min. response time.
Closed-loop relative humidity control: 0 - 100% � 2% RH, 10 min. response time.
Open-loop permanent gas concentration control: 0 - 40000 � 4 ppm, 2 min response time.
Open-loop volatile organics concentration control: up to 4 volatile organics, 2 min. response time.
Outer enclosure with closed-loop temperature control.
Fully automated computer controlled.
Sputter coater system with three film targets
Microscope with CCD camera
Annealing furnace with gas flow monitoring capabilities
Inspection microscopes